Magnetism in substitutionally doped TMDs: magnetic ground states and critical temperatures
ORAL
Abstract
Recent experimental advances in the field of two-dimensional (2D) magnetism have led to new avenues of realizing 2D magnets and their applications. A wide variety of 2D Transition-metal dichalcogenides (TMDs) doped with period four transition metals are expected to show magnetic order. The larger spin-orbit coupling in heavier TMDs (e.g., MoSe2) and their larger bandgaps open up the possibility to realize localized magnetic semiconductors through substitutional doping. Moreover, the magnetic order in TMDs through metal dopants is a charge driven phenomenon, which can be controlled via an external electric field, making transition-metal doped TMDs very attractive for future applications. In this work, we theoretically model the magnetic structure of TMDs (MoSe2, WSe2, MoS2, WS2, and MoTe2) substitutionally doped with all period four metals (Ti, V, Cr, Mn, Fe, Co, and Ni), using a combination of density functional theory and the Monte-Carlo algorithm. We calculate the magnetic ground state and the critical temperature for each dopant-TMD combination. We show that the magnetic stable states of the TMD fall in five distinct categories. Finally, we show that doping MoSe2 and WSe2 with vanadium (V), results in a room-temperature (>300K) ferromagnet at a doping concentration of 5-6%.
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Presenters
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Sabyasachi Tiwari
Imec
Authors
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Sabyasachi Tiwari
Imec
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Maarten Van de Put
Department of Materials Science and Engineering, The University of Texas at Dallas
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Bart Soree
imec, Imec
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William Vandenberghe
Department of Materials Science and Engineering, The University of Texas at Dallas