High-performance exchange-only qubits in the SLEDGE architecture

Existing architectures for silicon quantum-dot qubits have enabled high-fidelity state preparation and measurement¹, low-error randomized benchmarking², and millisecond-scale dynamical decoupling³. To facilitate improved control of the underlying electrostatic potential and scaling to larger arrays, we present a more advanced design called Single-Layer Etch-Defined Gate Electrode, or “SLEDGE.” These devices feature a single layer of non-overlapping gate electrodes and employ vias to break the plane to backend routing. Using this process, we demonstrate exchange-only qubit initialization, measurement, and randomized benchmarking with fidelities that compare favorably to the previous design. This architecture provides a path to scalable and high-performance silicon-based quantum devices.

¹Blumoff et al., APS March Meeting 2020, R38.00001
²Andrews et al., Nat. Nano. 14, 747 (2019)
³Sun et al., APS March Meeting 2020, L17.00008