Effect of heat treatment on Oxigen-rich functional groups in multilayer oxide Graphene
POSTER
Abstract
Multilayer Oxide Graphene (MOG) with Oxigen-rich Functional Groups (OFG) provides an attractive means to tunning electronic properties of MOG as smell sensor and others interesting applications.
We obtain five layer oxide graphene samples from a mechanical exfoliation of an oxydized graphite matrix by Hummers technique. These samples are thermically treated to obtain oxide reduced multilayer graphene wich are studied systematically observing Raman spectra with two light sources, green (532 nm) and blue (442 nm).
The impurities levels from the OFG form a miniband whose band width are observed depending on the heat treatment time which reduce the oxigen population in the MOG. These also are studied varying the intensity of the sources light observing the evolution of the I(D)/I(G) ratio for each temperature in the heat treatment process.
Our results shown the impurities band width remains constant for each temperature and for different intensity of the source light and diminish with respect to heat treatment time. All these mesaurements was realized in an in-situ heat treatment device.
We have realized a numerical study simulating the impurities band formation in the graphene electronic structure and the DOS and the results are compared with experimental results.
We obtain five layer oxide graphene samples from a mechanical exfoliation of an oxydized graphite matrix by Hummers technique. These samples are thermically treated to obtain oxide reduced multilayer graphene wich are studied systematically observing Raman spectra with two light sources, green (532 nm) and blue (442 nm).
The impurities levels from the OFG form a miniband whose band width are observed depending on the heat treatment time which reduce the oxigen population in the MOG. These also are studied varying the intensity of the sources light observing the evolution of the I(D)/I(G) ratio for each temperature in the heat treatment process.
Our results shown the impurities band width remains constant for each temperature and for different intensity of the source light and diminish with respect to heat treatment time. All these mesaurements was realized in an in-situ heat treatment device.
We have realized a numerical study simulating the impurities band formation in the graphene electronic structure and the DOS and the results are compared with experimental results.
Presenters
-
Adela Aurora Perez
Ciencias, Seccion Fisica, Pontifica Universidad Catolica del Peru
Authors
-
Adela Aurora Perez
Ciencias, Seccion Fisica, Pontifica Universidad Catolica del Peru
-
Rocio Amelia Montalvo
Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos
-
Maria Elena Lopez
Ciencias, Seccion Fisica, Pontifica Universidad Catolica del Peru
-
Ana Champi
Centro de Ciências Naturais e Humanas, Universidade Federal do ABC
-
Pablo Rivera Riofano
Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos