Exciton condensation in 2D WSe₂/InSe electric double layers

Exciton effects in two-dimensional (2D) materials are becoming more relevant to our understanding of photonic and optoelectronic devices. 2D transition metal dichalcogenides (TMDs), such as WSe₂, exhibit large exciton binding energies and have the flexibility of creating unique stacked heterostructures with other 2D materials in order to explore exciton condensation and other condensate-based applications. In this study we plan to illustrate the presence of interlayer excitons electrically formed between stacked layers of WSe₂ and InSe. We are able to confirm these electron-hole pairs via gate-induced tunnelling characteristics at varying bias voltages which can be compared to correlated electron-hole pair tunnelling characteristics. This study opens up the motivation and opportunity for other unique 2D heterostructure stacks to be probed for exciton condensation and advance exciton-based technologies.