Consistent Multiphysics analysis of direct-bandgap semiconductor structures.

Subwavelength optics [1] is a relatively new technology that enables SERS, extraordinary transmission through aperture arrays, and near-field lenses. One of the challenges in understanding how light interacts with doped semiconductor subwavelength structures is the interaction between the light incident on a structured surface and the free charge carriers in its constituent materials. This work presents a Multiphysics method for the analysis of III-V semiconductor-based structured surfaces. which includes an electromagnetics model, a semiclassical carrier transport model (e.g., BTE), and a Kane Hamiltonian-based electronic structure model. The purpose of the Multiphysics model is the consistent account of local effective material properties that depend on free carrier densities. As an example, electromagnetic fields in subwavelength cavities in InAs:Si are simulated over a mid-IR wavelength range. The proposed analysis is useful for a variety of structured surfaces, including plasmonic waveguides and resonant structures.
1. X.Luo, Advanced Materials, 31, 4, 25, 2019, 1804680.