Deterministic Positioning of Defect Based Qubits using Ion Beam Implantation for Nanofabrication and Modification

We will present our results on ion beam implantation for nanofabricate and modifications down to single atom devices via direct write nanofabrication at Sandia National Laboratories’ Ion Beam Laboratory. We concentrate on the nanoImplanter, a focused ion beam (FIB) implantation capability that is a multi-species 10-100 kV FIB system with a minimum spot size of 10 nm with both mass resolution using an ExB filter and single ion implantation capability using fast blanking. The combination of high spatial resolution, variable energy and the ability to implant a range of elements from the periodic table makes this a versatile machine for a range of topics from deterministic seeding of TaOx memristor devices, high resolution ion beam induced charge collection (IBIC), deterministic single donor devices for quantum computing research, to the formation of individual defect centers in wide bandgap substrates including diamond, SiC, hBN, etc… using in-situ detectors. Here we concentrate on FIB implantation into diamond nanostructures for the creation of color centers where we demonstrate the ability to deterministically implant ions into diamond photonic nanostructures with high spatial resolution, <40 nm. This enables high resolution arrays for yield testing as well as the development of strong coupling between the resulting color center and the nanophotonic cavities.