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Anomalous Hall Effect induced by extremely low field in ZrTe<sub>5</sub>

ORAL

Abstract

ZrTe5 has gathered interest in recent years due to its non-trivial topology. In monolayer form, it is predicted to be a quantum spin hall insulator. In bulk, it is predicted to reside extremely close to a phase transition between a strong and weak topological insulator. We report detailed measurements of the anomalous hall effect (AHE) in ZrTe5. We find the hall resistance saturates at an extremely low magnetic field ( B << 1T ), and remains at the saturation value for fields up to 32T. This AHE is present despite no evidence of magnetism in ZrTe5. Furthermore, in exfoliated devices in a quasi-bulk regime (dozens of layers thick) we find that the low-field orbital hall effect is suppressed and the AHE is clearly seen. We investigate the AHE effect in ZrTe5 as a function of temperature, magnetic field angle, and doping, and discuss the potential origins of this effect related to a non-vanishing berry curvature.

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Presenters

  • Joshua Mutch

    University of Washington

Authors

  • Joshua Mutch

    University of Washington

  • Paul Malinowski

    University of Washington

  • Qianni Jiang

    University of Washington, Department of Physics, University of Washington, Physics, University of Washington

  • Chong Wang

    Department of Physics, Carnegie Mellon University, Physics, Carnegie Mellon University, Carnegie Mellon University, Carnegie Mellon Univ

  • Di Xiao

    Carnegie Mellon Univ, Carnegie Mellon University, Department of Physics, Carnegie Mellon University, Physics, Carnegie Mellon University

  • Jiun-Haw Chu

    University of Washington, Department of Physics, University of Washington, Seattle, Department of Physics, University of Washington, Physics, University of Washington