Enhanced Tunneling Electroresistance in MoS<sub>2</sub>-Hf<sub>0</sub>.<sub>5</sub>Zr<sub>0</sub>.<sub>5</sub>O<sub>2</sub>-W Heterojunctions
ORAL
Abstract
A reproducibly large tunneling electroresistance (TER) effect resulting from the ferroelectric (FE) polarization reversal is of the great importance for the development of efficient ferroelectric tunnel junctions (FTJs). Recently, it has been demonstrated that incorporation of a semiconducting electrode into the FTJ allowed enhancement of the TER magnitude by several orders of magnitude. Here, we report the polarization-controlled TER of up to 105 % in Hf0.5Zr0.5O2 (HZO) based FTJs employing 2D MoS2 as a top electrode. The resistive switching effect induced by polarization reversal could be explained by the Fowler-Nordheim tunneling mechanism. Enhancement of the TER effect stems from the polarization-mediated accumulation or depletion of the electrons at the MoS2/HZO interface that alters the effective barrier profile seen by the conduction electrons. The obtained results may facilitate fabrication of high performance non-volatile resistive memory devices for information storage systems.
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Presenters
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Pradeep Chaudhary
University of Nebraska - Lincoln
Authors
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Pradeep Chaudhary
University of Nebraska - Lincoln
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Pratyush P Buragohain
University of Nebraska - Lincoln
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Anastasia Chouprik
Moscow Institue of Physics and Technology
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Alexey Lipatov
University of Nebraska - Lincoln
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Alexander Sinitskii
Department of Chemistry, University of Nebraska - Lincoln, University of Nebraska - Lincoln, Department of Chemistry, University of Nebraska-Lincoln
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Andrei Zekenvich
Moscow Institue of Physics and Technology
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Alexei Gruverman
University of Nebraska - Lincoln