Helical spin texture of Bi doped PbSb<sub>2</sub>Te<sub>4 </sub>topological insulator
ORAL
Abstract
For the study of topological insulator (TI), scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) are powerful tools to characterize the surface electronic properties. In the case of Bi2Te3 TI, a unique quasiparticle interference (QPI) pattern observed by STM revealed severe deformation of a Dirac cone. In search of the non-deformed ideal Dirac cone, Pb-based TIs were discovered. Pb-based TIs belong to peculiar topological class (1;111) whereas traditional TIs such as Bi2Te3 belong to (1;000). PbSb2Te4 is one of the Pb-based TIs, whose Fermi energy lies in the valence band. Therefore, its surface states are difficult to be observed by ARPES measurements.
In this study, we investigated the surface electronic properties of Bi doped PbSb2Te4 by STM. The helical spin texture of this compound is corroborated by a comparison between experimental and simulated QPI patterns. We also present the scattering process of carriers between the surface states.
In this study, we investigated the surface electronic properties of Bi doped PbSb2Te4 by STM. The helical spin texture of this compound is corroborated by a comparison between experimental and simulated QPI patterns. We also present the scattering process of carriers between the surface states.
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Presenters
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Yuya Hattori
Univ of Tokyo
Authors
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Yuya Hattori
Univ of Tokyo
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Yuki Tokumoto
Univ of Tokyo
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Keisuke Sagisaka
National Institute for Materials Science
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Keiichi Edagawa
Univ of Tokyo