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Tuning the band structure of monolayer WTe2 using back-gating in STM

ORAL

Abstract

Two-dimensional (2D) transition metal dichalcogenides are exciting systems potentially realizing toplogically protected edge states, topological superconductivity, and strong electron correlation physics. Monolayer 1T'-WTe2 has been demonstrated to be a time-reversal-invariant 2D topological insulator that becomes a superconductor upon doping. Atomically-resolved scanning tunneling microscopy (STM) confirmed clear edge states on WTe2 monolayer islands. Here, we report an STM study of back-gated monolayer 1T'-WTe2. Along with topographical images, we present scanning tunneling spectroscopy of monolayer islands, performed while tuning the out-of-plane electric field and carrier concentration. The monolayer band structure and the edge states evolve in response to doping and back-gating. We use first principle calculations to explain the observed effects.

Presenters

  • Yulia Maximenko

    University of Illinois Urbana-Champaign, University of Illinois at Urbana-Champaign, National Institute of Standards and Technology

Authors

  • Yulia Maximenko

    University of Illinois Urbana-Champaign, University of Illinois at Urbana-Champaign, National Institute of Standards and Technology

  • Yueqing Chang

    University of Illinois Urbana-Champaign, University of Illinois at Urbana-Champaign

  • Mark Hirsbrunner

    University of Illinois Urbana-Champaign, University of Illinois at Urbana-Champaign

  • Taylor L Hughes

    University of Illinois at Urbana-Champaign, University of Illinois Urbana-Champaign

  • Lucas Wagner

    University of Illinois at Urbana-Champaign, University of Illinois Urbana-Champaign

  • Vidya Madhavan

    University of Illinois at Urbana-Champaign, University of Illinois Urbana-Champaign, Department of Physics, University of Illinois at Urbana-Champaign