Persistent Photocarrier Accumulation and Depletion in LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Quantum Wells
ORAL
Abstract
Many semiconductors exhibit persistent photoconductance, whereby light induces long-term changes of conductance. Generally, this phenomenon entails carrier accumulation, while occasionally it can lead to depletion. Yet, a simultaneous control of accumulation and depletion by optical means has remained elusive. Here, we present the quantum well at the LaAlO3/SrTiO3 interface, where in addition to accumulation, a secondary photoexcitation enables carrier depletion. The balance between both processes is wavelength dependent, and allows tunable accumulation or depletion in an asymmetric manner, depending on the relative arrival time of photons of different frequencies. The role played by time in this unconventional photoresponse paves the way to an optical implementation of spike-timing dependent plasticity. Interesting, it may also open the way to an optical control of amplitude and sign of the spin-charge conversion efficiency in LaAlO3/SrTiO3 quantum wells.
[1] Y. Chen et al., Physical Review Letters, 124 246804 (2020).
[2] Y. Chen et al., ACS Appl. Electron. Mater., 1 1189 (2019).
[1] Y. Chen et al., Physical Review Letters, 124 246804 (2020).
[2] Y. Chen et al., ACS Appl. Electron. Mater., 1 1189 (2019).
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Presenters
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Yu Chen
Institute for Materials Science of Barcelona ICMAB-CSIC
Authors
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Yu Chen
Institute for Materials Science of Barcelona ICMAB-CSIC
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Yoann Lechaux
Normandie Univ, UNICAEN, ENSICAEN, CNRS, GREYC
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Blai Casals
Institute for Materials Science of Barcelona ICMAB-CSIC
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Bruno Guillet
Normandie Univ, UNICAEN, ENSICAEN, CNRS, GREYC
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Albert Minj
Normandie Univ, UNICAEN, ENSICAEN, CNRS, GREYC
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Jaume Gazquez
Institute for Materials Science of Barcelona ICMAB-CSIC
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Laurence Mechin
Normandie Univ, UNICAEN, ENSICAEN, CNRS, GREYC
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Gervasi Herranz
Institute for Materials Science of Barcelona ICMAB-CSIC