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Gallium Oxide

FOCUS · P53 · ID: 380703

Presentations

  • Acceptors in gallium oxide

    ORAL

    –

    Presenters

    • Matthew McCluskey

      Washington State Univ, Physics and Astronomy, Washington State University, Pullman, WA, USA 99164-2814

    Authors

    • Jani Jesenovec

      Washington State Univ

    • Jacob Ritter

      Washington State Univ

    • Christopher Pansegrau

      Washington State Univ

    • John McCloy

      Washington State Univ

    • Matthew McCluskey

      Washington State Univ, Physics and Astronomy, Washington State University, Pullman, WA, USA 99164-2814

    View abstract →

  • Acceptor-donor complexes in Ga<sub>2</sub>O<sub>3</sub>

    ORAL

    –

    Presenters

    • Intuon Chatratin

      Materials Science and Engineering, University of Delaware

    Authors

    • Intuon Chatratin

      Materials Science and Engineering, University of Delaware

    • Fernando Pereira Sabino

      Materials Science and Engineering, University of Delaware

    • Pakpoom Reunchan

      Physics, Kasetsart University

    • Anderson Janotti

      2- Department of Materials Science and Engineering, University of Delaware, University of Delaware, Materials Science and Engineering, University of Delaware, Department of Materials Science and Engineering, University of Delaware, Department of Materials Science & Engineering, University of Delaware

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  • Mid-gap defect levels of gallium oxide

    ORAL

    –

    Presenters

    • Suman Bhandari

      University of Alabama at Birmingham

    Authors

    • Suman Bhandari

      University of Alabama at Birmingham

    • Mary Ellen Zvanut

      University of Alabama at Birmingham

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  • Measurement of Ultrafast Dynamics of Gallium Vacancy Charge States in β-Ga<sub>2</sub>O<sub>3</sub>

    ORAL

    –

    Presenters

    • Arjan Singh

      Cornell University

    Authors

    • Arjan Singh

      Cornell University

    • Okan Koksal

      Cornell University

    • Nicholas Tanen

      Cornell University

    • Jonathan McCandless

      Cornell University

    • Debdeep Jena

      Cornell University, School of Electrical and Computer Engineering, Cornell University

    • Huili Grace Xing

      Cornell University

    • Hartwin Peelaers

      Department of Physics and Astronomy, University of Kansas, 2. Department of Physics and Astronomy, University of Kansas, University of Kansas

    • Farhan Rana

      Cornell University

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  • Computational Fermi level engineering and doping-type conversion of Ga<sub>2</sub>O<sub>3</sub> via three-step processing

    ORAL

    –

    Presenters

    • Anuj Goyal

      National Renewable Energy Labratory

    Authors

    • Anuj Goyal

      National Renewable Energy Labratory

    • Andriy Zakutayev

      National Renewable Energy Laboratory, National Renewable Energy Labratory, National Renewable Energy Lab

    • Vladan Stevanovic

      Colorado School of Mines, National Renewable Energy Labratory

    • Stephan Lany

      National Renewable Energy Laboratory, National Renewable Energy Labratory

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  • Reversible control of electronic transport in ionic-gel gated <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films

    ORAL

    –

    Presenters

    • Anil Rajapitamahuni

      University of Minnesota

    Authors

    • Anil Rajapitamahuni

      University of Minnesota

    • Anusha Kamath Manjeshwar

      University of Minnesota, Department of Chemical Engineering and Materials Science, University of Minnesota

    • Praneeth Ranga

      University of Utah

    • Sriram Krishnamoorthy

      University of Utah

    • Bharat Jalan

      University of Minnesota, Department of Chemical Engineering and Materials Science, University of Minnesota, Department of Electrical and Computer Engineering, University of Minnesota

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  • Incorporation of aluminum in (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3 </sub>alloys

    ORAL

    –

    Presenters

    • Mengen Wang

      Materials Department, University of California, Santa Barbara

    Authors

    • Mengen Wang

      Materials Department, University of California, Santa Barbara

    • Sai Mu

      Materials Department, University of California, Santa Barbara, University of California, Santa Barbara, UC Santa Barbara

    • Chris Van de Walle

      University of California, Santa Barbara, Materials, University of California, Santa Barbara, Materials Department, University of California, Santa Barbara, Materials Department, University of California Santa Barbara

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  • First-principles surface calculations for monoclinic Ga<sub>2</sub>O<sub>3</sub> and Al<sub>2</sub>O<sub>3</sub> and consequences for cracking of (Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> films

    ORAL

    –

    Presenters

    • Sai Mu

      Materials Department, University of California, Santa Barbara, University of California, Santa Barbara, UC Santa Barbara

    Authors

    • Sai Mu

      Materials Department, University of California, Santa Barbara, University of California, Santa Barbara, UC Santa Barbara

    • Mengen Wang

      Materials Department, University of California, Santa Barbara

    • Hartwin Peelaers

      Department of Physics and Astronomy, University of Kansas, 2. Department of Physics and Astronomy, University of Kansas, University of Kansas

    • Chris Van de Walle

      University of California, Santa Barbara, Materials, University of California, Santa Barbara, Materials Department, University of California, Santa Barbara, Materials Department, University of California Santa Barbara

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  • Fe<sup>3+</sup> and Cr<sup>3+</sup> Photoluminescence of Fe doped β-Ga<sub>2</sub>O<sub>3</sub>

    ORAL

    –

    Presenters

    • Cassi Remple

      Physics and Astronomy, Washington State University, Pullman, WA, USA 99164-2814

    Authors

    • Cassi Remple

      Physics and Astronomy, Washington State University, Pullman, WA, USA 99164-2814

    • Jesse Huso

      Klar Scientific, 1615 NE Eastgate Blvd., Unit G, Ste. 3E, Pullman, WA, USA 99163-5300

    • Matthew McCluskey

      Washington State Univ, Physics and Astronomy, Washington State University, Pullman, WA, USA 99164-2814

    View abstract →