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Planar Schottky tunneling spectroscopy of antiferromagnetic kagome metal FeSn

ORAL

Abstract

The kagome lattice has long been regarded as a conceptual lattice network that connects its characteristic atomic arrangement to unusual singularities in the electronic structure. The recent discovery of Dirac dispersions and flat bands in transition metal stannide T-Sn (T = Fe, Co) kagome compounds has brought the long-sought theoretical framework into realistic material systems [1]. Here we report the surface-sensitive planar tunneling spectroscopy of antiferromagnetic kagome metal FeSn across a Schottky heterointerface with an n-type degenerate semiconductor [2, 3]. We present measurements across a wide range of temperatures, barrier widths, and magnetic fields probing the underlying electronic structure. We also discuss the relevance of our results to potential applications for spintronic devices.
References:
[1] M. Kang, L. Ye et al., Nat. Mater. 19, 163 (2020)
[2] H. Inoue, M. Han et al., Appl. Phys. Lett. 115, 072403 (2019)
[3] M. Han, H. Inoue et al., in preparation (2020)

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Presenters

  • Minyong Han

    Massachusetts Institute of Technology

Authors

  • Minyong Han

    Massachusetts Institute of Technology

  • Hisashi Inoue

    National Institute of Advanced Industrial Science and Technology (AIST)

  • Shiang Fang

    Rutgers University, Department of Physics and Astronomy, Rutgers University, Department of Physics, Rutgers

  • Caolan John

    University of California, Berkeley, Massachusetts Institute of Technology

  • Linda Ye

    Department of Physics, Massachusetts Institute of Technology, Massachusetts Institute of Technology

  • Mun K. Chan

    National High Magnetic Field Laboratory (LANL)

  • David E Graf

    National High Magnetic Field Laboratory, Florida State University, National High Magnetic Field Lab, Florida State University, National High Magnetic Field Laboratory, Tallahassee and Florida State University, National High Magnetic Field Laboratory, Florida State University, National High Magnetic Field Laboratory (FSU), Department of Physics, Florida State University, National High Magnetic Field Laboratory and Department of Physics, Florida State University, National High Magnetic Field Lab, National High Magnetic Field Laboratory, Tallahassee, FL, CMS, National High Magnetic Laboratory

  • Takehito Suzuki

    Massachusetts Institute of Technology, Department of Physics, Cambridge, MA, USA, Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology

  • Madhav Prasad Ghimire

    Tribhuvan University

  • Won Joon Cho

    Samsung Advanced Institute of Technology (SAIT)

  • Efthimios Kaxiras

    Harvard University, Department of Physics, Harvard University, Physics, Harvard University

  • Joseph Checkelsky

    Massachusetts Institute of Technology, Department of Physics, Cambridge, MA, USA, Massachusetts Institute of Technology MIT, Department of Physics, Massachusetts Institute of Technology, Massachusetts Institute of Technology, Physics, Massachusetts Institute of Technology