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Large light-induced modulation of the Metal Insulator Transition in photoconductor/Mott heterostructures

ORAL

Abstract

Some Mott insulators exhibit a metal-to-insulator transition (MIT) across which the electrical resistance shows large changes. Modification of the electrical transport with an electric field has been extensively investigated and its use in emerging applications such as neuromorphic computing and voltage controlled optoelectronics seems very promising. Here we investigate the modification of the transport properties with light. We have discovered large effects using heterostructures consisting of a photoconductor CdS, film on top of ultrathin layers of the archetypal Mott insulators: VO2 or V2O3. For CdS/VO2, we observed a non-volatile light induced modulations of the MIT resulting in resistance changes of up to 3 orders of magnitude. On the other hand, for the CdS/V2O3 bilayer, we found a volatile light-induced modulations of the transition temperature (TMIT) of ~140 K, with resistance changes as large as 6 orders of magnitude. We will discuss the possible physical origin of this interesting effect.

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Presenters

  • Henry Navarro

    Department of Physics, University of California, San Diego, Department of Physics, University of California San Diego

Authors

  • Henry Navarro

    Department of Physics, University of California, San Diego, Department of Physics, University of California San Diego

  • Javier del Valle

    Department of Quantum Matter Physics, University of Geneva, University of Geneva, Univ of Geneva

  • Yoav Kalcheim

    Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Faculty of Materials Science and Engineering, Technion-Israel Institute of Technology, Technion - Israel Institute of Technology, Technion-Israel Institute of Technology, University of California, San Diego

  • Nicolas M Vargas

    Department of Physics, University of California, San Diego, University of California, San Diego, Department of Physics, University of California San Diego

  • Coline Adda

    University of California, San Diego, Department of Physics, University of California, San Diego, Department of Physics, University of California San Diego

  • Minhan Lee

    Materials Science and Engineering Program, University of California, San Diego, Department of Physics, University of California, San Diego, University of California, San Diego, Department of Physics, University of California San Diego

  • Pavel Lapa

    Department of Physics and Center for Advanced Nanoscience, University of California, San Diego, Department of Physics, University of California, San Diego, Materials Science Division, Argonne National Laboratory

  • Alberto Rivera

    Universidad Complutense de Madrid, Departamento de Física de Materiales, Universidad Complutense de Madrid, Física de Materiales, Universidad Complutense de Madrid

  • Ivan Zaluzhnyy

    University of California, San Diego, Department of Physics, University of California, San Diego

  • Erbin Qiu

    Department of Physics, University of California, San Diego

  • Oleg Shpyrko

    University of California, San Diego, Department of Physics, University of California, San Diego

  • Marcelo Rozenberg

    Laboratoire de Physique des Solides, Université Paris Saclay, CNRS, Laboratoire de Physique des Solides, CNRS, Université Paris-Saclay

  • Alex Frano

    University of California, San Diego, University of California San Diego, Department of Physics, University of California, San Diego

  • Ivan Schuller

    University of California, San Diego, Dept. of Physics and Center for Advanced Nanoscience, UCSD, La Jolla, CA, USA, Physics Department, University of California, San Diego, Department of Physics, University of California, San Diego