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Charge Engineering of RNiO<sub>3</sub>-based Mott Transistors with a Ferroelectric Gate

ORAL

Abstract

We present a comprehensive study of ferroelectric-gated Mott transistors based on high-quality epitaxial heterostructures composed of a ferroelectric Pb(Zr,Ti)O3 (PZT) gate and a correlated oxide RNiO3 (R = La, Nd, Sm) channel. For single-layer nickelate channels, including Sm0.5Nd0.5NiO3, NdNiO3 (NNO), and LaNiO3 (LNO), the resistance switching ratio ΔR/Ron increases exponentially with decreasing channel thickness until it approaches the electrical dead layer thickness, with the maximum ΔR/Ron~200% observed in 1 nm LNO channel. Inserting a La1-xSrxMnO3 (LSMO) buffer layer can lead to over two orders of magnitude increase in ΔR/Ron for devices with the same channel thickness, which is attributed to a tailored density profile due to the interfacial charge transfer. Our studies highlight the intricate interplay of charge itineracy and carrier density in determining the performance limit of ferroelectric gated mott-transistor.

Presenters

  • Yifei Hao

    University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln

Authors

  • Yifei Hao

    University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln

  • Xuegang Chen

    Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln

  • Le Zhang

    University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln

  • Xia Hong

    Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln