Charge Engineering of RNiO<sub>3</sub>-based Mott Transistors with a Ferroelectric Gate
ORAL
Abstract
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Presenters
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Yifei Hao
University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln
Authors
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Yifei Hao
University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln
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Xuegang Chen
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln
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Le Zhang
University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln
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Xia Hong
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, University of Nebraska - Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln