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Multi-orbital superconductivity in 4Hb-TaS2 in the dirty limit: Part II

ORAL

Abstract

<div style="direction: ltr;">The transition metal dichalcogenide 4Hb-TaS2 consists of alternating single layers of octahedrally oriented T structure and trigonally oriented H structure. Separately, in their bulk form, these two structures have very different ground states: while 1T-TaS2 is a strongly correlated insulator and a spin-liquid candidate, 2H-TaS2 is a superconductor. The 4Hb compound also has a superconducting ground state, which has been argued to be chiral due to the onset of a μSR signal concomitant to the superconducting transition. </div> <div style="direction: ltr;">At the same time however, measurements of the heat capacity below Tc indicate the existence of a large density of gapless states. In part II of this talk, we show how a residual Fermi surface can naturally emerge in a multi-pocket superconductor due to pair-breaking impurities with pocket-dependent scattering rates. Based on the DFT calculations and effective tight-binding model introduced in part I, we show how a strong pocket-dependent coupling to magnetic moments arising from the 1T layers naturally forms in this system. We then compute the tunneling DOS and heat capacity, which agree well with the data. </div>

Presenters

  • David Dentelski

    Bar Ilan Univ, Bar Ilan University

Authors

  • David Dentelski

    Bar Ilan Univ, Bar Ilan University

  • Ezra Day-Roberts

    Physics, University of Minnesota, University of Minnesota

  • Turan Birol

    University of Minnesota, Department of Chemical Engineering and Materials Science, University of Minnesota, Physics, University of Minnesota, School of Physics and Astronomy, University of Minnesota

  • Rafael Fernandes

    University of Minnesota, School of Physics and Astronomy, University of Minnesota, Physics, University of Minnesota, School of Physics and Astronomy, University of Minnesota, Minneapolis, 55455 MN, School of Physics and Astronomy, University of Minnesota, Minneapolis

  • Jonathan Ruhman

    Bar Ilan Univ, Bar Ilan University