Lattice Softening in Metastable bcc Co<i><sub>x</sub></i>Mn<sub>100-<i>x</i></sub>(001) Ferromagnetic Layers for a Strain-Free Magnetic Tunnel Junction
ORAL
Abstract
In spintronics, one of the long standing questions is why the MgO barrier is almost the only option to achieve a large tunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not as large as the theoretical prediction. We have developed an almost strain-free magnetic tunnel junction (MTJ) using metastable bcc CoxMn100-x (CoMn) ferromagnetic films to reveal the reason. We have investigated the degree of crystallisation in MTJ consisting of CoMn/MgO/CoMn in relation to their TMR ratios. Cross-sectional high resolution transmission electron microscopy reveals that almost consistent lattice constants of the MTJ layers for 66≤x≤83 with maintaining large TMR ratios of 229% at RT, confirming the soft nature of the CoMn layer with some dislocations at the MgO/Co75Mn25 interfaces. For x=86, the TMR ratio is found to be reduced to 142% at RT, which is partially attributed to the increased number of the dislocations at the MgO/Co86Mn14 interfaces and amorphous grains in the MgO barrier. Ab-initio calculations confirm the crystalline deformation stability across a broad compositional range in CoMn, proving a strain-free interface for larger TMR ratios. Further optimisation can achieve > 1,000% TRM ratio at RT.
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Presenters
Atsufumi Hirohata
University of York
Authors
Kelvin Elphick
University of York
Kenta Yoshida
Institute for Materials Research, Tohoku University
Tufan Roy
Research Institute of Electrical Communication, Tohoku University
Tomohiro Ichinose
WPI Advanced Institute for Materials Research, Tohoku University
Kazuma Kunimatsu
WPI Advanced Institute for Materials Research, Tohoku University
Tomoki Tsuchiya
WPI Advanced Institute for Materials Research, Tohoku University
Masahito Tsujikawa
Research Institute of Electrical Communication, Tohoku University
Yasuyoshi Nagai
Institute for Materials Research, Tohoku University
Shigemi Mizukami
WPI Advanced Institute for Materials Research, Tohoku University
Masafumi Shirai
Research Institute of Electrical Communication, Tohoku University