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Thickness-dependent quantum transport of Weyl fermions in ultrahigh-quality SrRuO<sub>3</sub> films

ORAL

Abstract

Emergence of the magnetic Weyl semimetal state has recently been reported in ultrahigh-quality SrRuO3 thin films [1,2], providing a new platform for exploring novel physics related to a pair of Weyl nodes in epitaxial heterostructures. However, there is a dearth of knowledge on the thickness dependence of the quantum transport properties peculiar to the magnetic Weyl semimetal state in it, and hence, we investigated magnetotransport properties of SrRuO3 with various thicknesses (t = 1–60 nm). Signatures of Weyl fermions—unsaturated linear positive magnetoresistance accompanied with a quantum oscillation having a non-trivial Berry phase—were observed for t ≥ 10 nm. The residual resistivity increases with decreasing film thickness, indicating more disorder near the interface. This thickness-dependent scattering affects magnetic properties as well. The Curie temperature decreases and the coercive field increases with decreasing thickness. These results provide a guideline for designing SrRuO3-based functional heterostructures in which Weyl fermions play an essential role.
[1] K. Takiguchi, Y. K. Wakabayashi et al., Nat. Commun. 11, 4969 (2020).
[2] Y. K. Wakabayashi et al., APL Mater. 7, 101114 (2019).

Presenters

  • Shingo Kaneta-Takada

    Department of Electrical Engineering and Information Systems, The University of Tokyo, NTT Basic Research Laboratories, Univ of Tokyo

Authors

  • Shingo Kaneta-Takada

    Department of Electrical Engineering and Information Systems, The University of Tokyo, NTT Basic Research Laboratories, Univ of Tokyo

  • Yuki Wakabayashi

    NTT Basic Research Labs, NTT Basic Research Laboratories

  • Yoshiharu Krockenberger

    NTT Basic Research Labs, NTT Basic Research Laboratories

  • Shinobu Ohya

    Institute of Engineering Innovation, The University of Tokyo, Department of Electrical Engineering and Information Systems, The University of Tokyo, Electrical Engineering and Information Systems, Univ of Tokyo, Univ of Tokyo

  • Masaaki Tanaka

    Department of Electrical Engineering and Information Systems, The University of Tokyo, Electrical Engineering and Information System, Univ of Tokyo, Electrical Engineering and Information Systems, Univ of Tokyo, Univ of Tokyo

  • yoshitaka taniyasu

    NTT Basic Research Labs, NTT Basic Research Laboratories

  • Hideki Yamamoto

    NTT Basic Research Labs, NTT Basic Research Laboratories