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Voltage Control of Magnetism Enabled by Resistive Switching

ORAL

Abstract

Application of a strong electric stimulus, voltage or current, to ferromagnetic (FM) oxide (La,Sr)MnO3 (LSMO) triggers the metal-insulator transition producing a low- to high-state resistive switching. This switching occurs by the nucleation and growth of an insulating paramagnetic (PM) barrier perpendicular to the current flow, in contrast to conventional filamentary percolation parallel to the current. The voltage-induced barrier formation results in an unusual FM/PM/FM configuration leading to a dramatic change of magnetic anisotropy. Before the PM barrier nucleation, the devices have an easy-plane anisotropy showing nearly square hysteresis loops in any in-plane direction. After the barrier nucleation, the direction perpendicular to the barrier becomes the hard anisotropy axis, which is evidenced by the complete suppression of the remanence and coercivity and the strong enhancement of the saturation fields in the hysteresis loops. Our work shows that employing resistive switching is a viable strategy to achieve voltage-controlled magnetism.

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Presenters

  • Pavel Salev

    Dept. of Physics and Center for Advanced Nanoscience, UCSD, La Jolla, CA, USA, Department of Physics, University of California, San Diego, University of California, San Diego

Authors

  • Pavel Salev

    Dept. of Physics and Center for Advanced Nanoscience, UCSD, La Jolla, CA, USA, Department of Physics, University of California, San Diego, University of California, San Diego

  • Iana Volvach

    University of California, San Diego

  • Dayne Sasaki

    University of California, Davis

  • Lorenzo Fratino

    Laboratoire de Physique des Solides, CNRS

  • Rani Berkoun

    Laboratoire de Physique des Solides, CNRS

  • Pavel N. Lapa

    University of California, San Diego

  • Javier del Valle

    Department of Quantum Matter Physics, University of Geneva, University of Geneva, Univ of Geneva

  • Yoav Kalcheim

    Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Faculty of Materials Science and Engineering, Technion-Israel Institute of Technology, Technion - Israel Institute of Technology, Technion-Israel Institute of Technology, University of California, San Diego

  • Marcelo Rozenberg

    Laboratoire de Physique des Solides, Université Paris Saclay, CNRS, Laboratoire de Physique des Solides, CNRS, Université Paris-Saclay

  • Yayoi Takamura

    Department of Materials Science and Engineering, University of California, Davis, University of California, Davis

  • Vitaliy Lomakin

    University of California, San Diego

  • Ivan Schuller

    University of California, San Diego, Dept. of Physics and Center for Advanced Nanoscience, UCSD, La Jolla, CA, USA, Physics Department, University of California, San Diego, Department of Physics, University of California, San Diego