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Imaging the valley and orbital Hall effect in monolayer MoS2

ORAL

Abstract

The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion symmetry, the nonzero Berry curvature results in a valley Hall effect. We identify a previously unrecognized consequence of Berry curvature in these materials: an electric-field-induced change in the electrons' charge density orientation. We use first-principles calculations to show that measurements of the electric-field-induced change in the charge density or local density of states in MoS2 can be used to measure its energy-dependent valley and orbital Hall conductivity.

Presenters

  • Paul M Haney

    National Institute of Standards and Technology, Physical Measurement Laboratory, National Institute of Standards and Technology, Nanoscale Processes and Measurements Group, National Institute of Standards and Technology

Authors

  • Paul M Haney

    National Institute of Standards and Technology, Physical Measurement Laboratory, National Institute of Standards and Technology, Nanoscale Processes and Measurements Group, National Institute of Standards and Technology

  • Vivek Amin

    Dept. of Physics, Indiana University - Purdue University Indianapolis

  • Fei Xue

    National Institute of Standards and Technology, Nanoscale Processes and Measurements Group, National Institute of Standards and Technology, Institute for Research in Electronics and Applied Physics & Maryland Nanocenter, U