APS Logo

Wafer-scale electrically tunable quantum nodes in silicon carbide

ORAL

Abstract

Defect spin qubits in silicon carbide (SiC) with associated nuclear spin quantum memories [1] can leverage near-telecom emission and wafer-scale semiconductor device engineering [2] for creating quantum technologies. Here, we highlight recent advances with the neutral divacancy (VV0) in SiC within the context of long-distance quantum communication and repeater schemes. We isolate single VV0 defects in functional SiC optoelectronic devices, which allows for deterministic charge state control and terahertz tuning, but also surprisingly eliminates spectral diffusion in the optical structure of these defects. This results in lifetime-limited single-photon emission through semiconductor depletion which offers a generalizable strategy for quantum emitters limited by charge noise. We further discuss the outlook for electrical control, manipulation, and readout of both the spin and charge degrees of freedom in these spin qubits. Combined with the entanglement and control of nuclear spin registers, this work establishes a promising platform for quantum science.

References:
[1] A. Bourassa* and C. P. Anderson* et al., Nature Materials (2020) [arXiv:2005.07602]
[2] C. P. Anderson* and A. Bourassa* et al., Science 366, 6470, 1225-1230 (2019)

–

Presenters

  • Christopher Anderson

    Pritzker School of Molecular Engineering, University of Chicago, Pritzker School for Molecular Engineering, University of Chicago, University of Chicago

Authors

  • Christopher Anderson

    Pritzker School of Molecular Engineering, University of Chicago, Pritzker School for Molecular Engineering, University of Chicago, University of Chicago

  • Alexandre Bourassa

    Pritzker School of Molecular Engineering, University of Chicago, University of Chicago

  • Kevin Miao

    Pritzker School of Molecular Engineering, University of Chicago, University of Chicago

  • Mykyta Onizhuk

    University of Chicago, Pritzker School of Molecular Engineering, University of Chicago

  • He Ma

    Department of Chemistry, University of Chicago, Pritzker School of Molecular Engineering, University of Chicago, University of Chicago

  • Gary Wolfowicz

    Argonne National Lab, Argonne National Laboratory, Center for Molecular Engineering and Materials Science Division, Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory, Argonne National Laboratory, Argonne

  • Alexander Crook

    Pritzker School of Molecular Engineering, University of Chicago, Department of Physics, University of Chicago

  • Peter J Mintun

    Pritzker School of Molecular Engineering, University of Chicago

  • Hiroshi Abe

    National Institutes for Quantum and Radiological Science and Technology, National Institutes for Quantum and Radiological Science and Technology (QST)

  • Jawad Ul-Hassan

    Department of Physics, Chemistry and Biology, Linköping University

  • Nguyen T Son

    Department of Physics, Chemistry and Biology, Linköping University

  • Takeshi Ohshima

    National Institutes for Quantum and Radiological Science and Technology, National Institutes for Quantum and Radiological Science and Technology (QST)

  • Giulia Galli

    The University of Chicago, Pritzker School of Molecular Engineering, The University of Chicago, Pritzker School of Molecular Engineering, University of Chicago, University of Chicago, Department of Chemistry, University of Chicago, Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory

  • David Awschalom

    University of Chicago, Pritzker School of Molecular Engineering, University of Chicago, Pritzker School for Molecular Engineering, University of Chicago, Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory