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Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide

ORAL

Abstract

Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Their extrinsic nature promises easy device integration through nano implantation. Specifically, chromium in the 4+ charge state (Cr4+) in silicon carbide (SiC) produces an S = 1 ground state and an S = 0 excited state with a strain insensitive near-telecom Λ-like optical-spin interface. In previous demonstrations the ground state spin control was limited by material quality. In this work [1], we study the formation of Cr4+ in a commercial SiC substrate through implantation and annealing, enabling optical and coherent spin characterization. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude narrower compared to as-grown samples. Through a detailed investigation of the Cr4+ governing transition dynamics, we optimize for high readout fidelities (79%). We report T1 times greater than 1 s at T = 15 K with a T2* = 317 ns and a T2 = 81 μs limited by the ensemble density. These results demonstrate Cr4+ in SiC to be an optically active spin-qubit for integration within hybrid quantum devices.

[1] B. Diler, et. al. npj Quantum Inf 6, 11 (2020)

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Presenters

  • Berk Diler Kovos

    University of Chicago, Pritzker School of Molecular Engineering, University of Chicago, Pritzker School for Molecular Engineering, University of Chicago

Authors

  • Berk Diler Kovos

    University of Chicago, Pritzker School of Molecular Engineering, University of Chicago, Pritzker School for Molecular Engineering, University of Chicago

  • Samuel J Whiteley

    Department of Physics, University of Chicago

  • Christopher Anderson

    Pritzker School of Molecular Engineering, University of Chicago, Pritzker School for Molecular Engineering, University of Chicago, University of Chicago

  • Gary Wolfowicz

    Argonne National Lab, Argonne National Laboratory, Center for Molecular Engineering and Materials Science Division, Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory, Argonne National Laboratory, Argonne

  • Marie Elizabeth Wesson

    Department of Physics, University of Chicago

  • Edward Bielejec

    Sandia National Laboratories, Center for Integrated Nanotechnologies, Sandia National Laboratories

  • F. Joseph

    Argonne National Lab, Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Argonne National Laboratory, Center for Molecular Engineering and Materials Science Division, Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory

  • David Awschalom

    University of Chicago, Pritzker School of Molecular Engineering, University of Chicago, Pritzker School for Molecular Engineering, University of Chicago, Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory