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Purcell enhancement of a silicon carbide color center with coherent spin control

ORAL

Abstract

Silicon carbide (SiC) has recently been developed as a platform for optically addressable spin defects such as the neutral divacancy, most notably in the 4H polytype. Here we present the Purcell enhancement and coherent spin control of a single divacancy coupled to a photonic crystal cavity [1]. We combine nanolithographic techniques with a dopant-selective photoelectrochemical etch to produce a suspended SiC nanobeam cavity with a quality factor of ~5000. This results in a Purcell factor of ~50 for a divacancy within the cavity mode, which increases photoluminescence into the zero-phonon line and shortens the excited state lifetime. Additionally, we use a combination of microwave fields and laser tones to control the divacancy ground state spin and probe coherence inside the cavity nanostructure. This system represents an advance towards the scalability of long-distance entanglement schemes using SiC that require the interference of indistinguishable photons from spatially separated single defects.

[1] Crook, A. L., et al. Nano Lett. 20 (5), 3427-3434 (2020).

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Presenters

  • Alexander Crook

    Pritzker School of Molecular Engineering, University of Chicago, Department of Physics, University of Chicago

Authors

  • Alexander Crook

    Pritzker School of Molecular Engineering, University of Chicago, Department of Physics, University of Chicago

  • Christopher Anderson

    Pritzker School of Molecular Engineering, University of Chicago, Pritzker School for Molecular Engineering, University of Chicago, University of Chicago

  • Kevin Miao

    Pritzker School of Molecular Engineering, University of Chicago, University of Chicago

  • Alexandre Bourassa

    Pritzker School of Molecular Engineering, University of Chicago, University of Chicago

  • Hope Lee

    Department of Physics, University of Chicago

  • Sam L Bayliss

    Pritzker School of Molecular Engineering, University of Chicago

  • David O Bracher

    Department of Physics, Harvard University

  • Xingyu Zhang

    John A. Paulson School of Engineering and Applied Sciences, Harvard University

  • Hiroshi Abe

    National Institutes for Quantum and Radiological Science and Technology, National Institutes for Quantum and Radiological Science and Technology (QST)

  • Takeshi Ohshima

    National Institutes for Quantum and Radiological Science and Technology, National Institutes for Quantum and Radiological Science and Technology (QST)

  • Evelyn L Hu

    Department of Physics, Harvard University

  • David Awschalom

    University of Chicago, Pritzker School of Molecular Engineering, University of Chicago, Pritzker School for Molecular Engineering, University of Chicago, Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory