High field transport and hot electron noise in GaAs from first principles

Hot carrier transport and fluctuations is a topic of fundamental and practical interest. Although ab-initio calculations of low-field mobility are now routine, an equivalent framework for calculating spectral noise power has only recently been developed and is limited to weak electric fields. Here, we report a first-principles approach to compute the spectral noise power of a hot electron gas with no adjustable parameters. We apply the formalism to GaAs with fields exceeding kV/cm. Our work will provide a microscopic perspective of the electron-phonon interactions that lead to current noise in a hot electron gas.