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Self-Assembled Molecular Junction Bolometers for Mid Infrared Detection

ORAL

Abstract

A tremendous mechanical sensitivity can be achieved by a mechanically tunable quantum tunneling barrier. The tunneling resistance across the nanometer-sized gap can be changed by several orders of magnitude through a sub-angstrom-scale displacement. Here we demonstrate a suspended metal/self-assembled monolayer (SAM)/metal nanostructure to implement such a mechanically tunable tunneling barrier and use it as an ultra-sensitive bolometric mid-infrared (IR) detector. Fabricated proof-of-concept metal/SAM/metal bolometers yield a temperature coefficient of resistance (TCR) of up to 0.2 K-1, and theoretical predictions show that with further optimization the TCRs could be improved to as much as 5 K-1, which is more than one order of magnitude better than the state-of-the-art VOx bolometers. Strain, transport, noise and mid-IR scanning photocurrent microscopy measurements are performed to show the full functionality of the devices.

Presenters

  • Elaine McVay

    Massachusetts Institute of Technology MIT

Authors

  • Elaine McVay

    Massachusetts Institute of Technology MIT

  • Yuxuan Lin

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Massachusetts Institute of Technology MIT

  • Jinchi Han

    Massachusetts Institute of Technology MIT

  • Qiong Ma

    Massachusetts Institute of Technology MIT

  • Jing Kong

    Department of Electrical Engineering, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Massachusetts Institute of Technology MIT

  • Pablo Jarillo-Herrero

    MIT, Massachusetts Institute of Technology MIT, Department of Physics, Massachusetts Institute of Technology, Massachusetts Institute of Technology, Physics, Massachusetts Institute of Technology

  • Vladimir Bulovic

    Massachusetts Institute of Technology MIT

  • Jeffrey Lang

    Massachusetts Institute of Technology MIT

  • Farnaz Niroui

    Massachusetts Institute of Technology MIT

  • Tomas Palacios

    Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Massachusetts Institute of Technology MIT