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Photo-assisted non-volatile resistive switching in CdS/V<sub>3</sub>O<sub>5</sub> hybrid

ORAL

Abstract

Resistive switching (RS) is one of the key phenomena proposed for nonvolatile memories, neural networks, and optoelectronics. The unique properties of quantum materials by implementating their functionalities in hardware, provide energy-efficient solutions for these applications. Recent studies based on VO2 and V2O3 have shown the possible development of scalable neuristors and memristors by combining two physical phenomena (electric + thermal or electric +pressure/strain). In this work, we have fabricated and characterized a hybrid composed of the photoconductor CdS on top of V3O5 thin film. V3O5 exhibits an insulator-metal transition (IMT) around Tc=415K. We have investigated the electrical properties of the V3O5 when submitting the bilayer to illumination, under different temperature. At RT, V3O5 undergoes a non-volatile RS upon illumination. Cycling V3O5 through the high temperature metallic state (above Tc) provides the reset mechanism. Our work demonstrates a new optically controlled RS behavior.
Sci. Rep. 10, 4292 (2020).
Proc. Natl. Acad. Sci. 116, 8798–8802 (2019).

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Presenters

  • Coline Adda

    Department of Physics, University of California, San Diego

Authors

  • Coline Adda

    Department of Physics, University of California, San Diego

  • Henry Navarro

    Department of Physics, University of California, San Diego

  • Minhan Lee

    Materials Science and Engineering Program, University of California, San Diego, Department of Physics, University of California, San Diego, University of California, San Diego, Department of Physics, University of California San Diego

  • Ivan Schuller

    University of California, San Diego, Dept. of Physics and Center for Advanced Nanoscience, UCSD, La Jolla, CA, USA, Physics Department, University of California, San Diego, Department of Physics, University of California, San Diego