Identifying Non-centrosymmetric Electronic Structures of Defect in Tungsten Ditelluride
ORAL
Abstract
WTe2 is a transition metal dichalcogenide with novel electronic structures. Because defects in WTe2 can affect its properties, a precise classification of defects is required to help understand the possible influence beyond them. By using scanning tunneling microscope (STM) and density functional theory (DFT) calculation, we investigated both geometric and electronic structures of the defects in WTe2. We revealed non-centrosymmetric electronic structures near the Te defects. Furthermore, each type of defect show unique interference patterns, significantly identifying four types of defects at both the bottom and top sides. These findings confirm that the observation of interference pattern is a feasible method to characterize the defects in layered materials.
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Presenters
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Wan-Hsin Chen
Department of Electrophysics, Natl Chiao Tung Univ
Authors
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Wan-Hsin Chen
Department of Electrophysics, Natl Chiao Tung Univ
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Naoya Kawakami
Natl Chiao Tung Univ, Department of Electrophysics, Natl Chiao Tung Univ
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Jhe-Jhih Lin
Department of Electrophysics, Natl Chiao Tung Univ
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Hsiang-I Huang
Department of Electrophysics, Natl Chiao Tung Univ
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Ryuichi Arafune
MANA-NIMS
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Noriaki Takagi
Kyoto Univ, Kyoto University
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Chunliang Lin
Natl Chiao Tung Univ, Department of Electrophysics, Natl Chiao Tung Univ