Ab-initio electronic noise of warm electrons in n-type silicon

Ab-initio calculations of low-field mobility are now routine for semiconductors like silicon, but the transport and fluctuational properties at higher fields as well as their spectral features remain unexplored. Here, we report an ab-initio study of AC transport and fluctuational properties of warm electrons in n-type silicon, using a recently developed numerical approach (arXiv:2009.11395). No adjustable parameters are required in this approach, as the scattering rates and band structure are calculated from first-principles. Transverse and longitudinal noise temperatures are reported, and the temperature dependence of intervalley scattering investigated.