Anomalous Hall effect and Lifshitz transition in ZrTe₅

The proximity of the Fermi energy to its Dirac node make ZrTe₅ a suitable platform in which to study the influence of topology in transport properties. In particular, it has been shown that the Berry curvature in ZrTe₅ gives rise to an anomalous contribution to its Hall signal. We report measurements of the Anomalous Hall Effect in ZrTe₅ at different stages of a temperature induced Lifshitz transition, in which the Fermi level decreases with increasing temperature. An enhancement of the anomalous Hall signal is observed for temperatures at which the Fermi level approaches the vicinity of the Dirac node, providing an insight of the interplay between topology and electronic states in the system. Our results show that ZrTe₅ is a highly tunable platform at which to study the influence of topology in electronic transport.