Electric field control of spin-orbit torque switching in a spin-orbit ferromagnet single layer

Current-induced spin-orbit torque (SOT) has been proposed as a promising candidate to control the magnetization of ferromagnetic materials. To realize the multifunctional spin logic and memory devices utilizing SOT, achieving the SOT manipulation is important. Nowadays, SOT switching can be manipulated by controlling the interfacial oxidization, but its efficiency is limited because it depends on the interface quality.

Here, we report a successful control of a full SOT switching via an external electric field in a single-crystalline ferromagnetic semiconductor (Ga,Mn)As with strong spin-orbit coupling^1,2. By applying the gate voltage, the switching current density can be solidly manipulated reversibly with a large manipulation ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. Our finding will advance the development of energy-efficient gate-controlled spin-orbit-torque devices.

1. M. Jiang et al., Nat. Commun. 10, 2590 (2019).
2. M. Jiang et al., to be published in Nat. Electron. (2020).