Measurement of the out-of-plane g-factor in strained Ge/SiGe using single-hole quantum dots

Lithographically patterned quantum dots in strained Ge/SiGe have become promising candidates for quantum computing, with a quick progression to qubit logic demonstrations. Here we present an experimental measurement of the out-of-plane g-factor in this material for a single hole confined to a quantum dot, which avoids the strong orbital effects that can occur in this configuration. Strong asymmetry of the g-factor between the in- and out-of-plane directions is seen. These results are in agreement with calculations using the Luttinger Hamiltonian and suggest dramatic tunability through both the B-field and the charge state.