Simulations and Experimental Results of Color-Tunability in Eu-doped GaN LEDs
POSTER
Abstract
The rare-earth ion Eu3+ is well-known for its red emission at ~620 nm; however, green emission at ~545 nm also exists and is significant in Eu-doped GaN-based devices under certain current injection conditions. The relative change of intensity in the red and green emission peaks of these LEDs allows for color tuning of the overall emission, which is facilitated by pulsed current injection at various frequencies and duty cycles. This result makes the Eu-doped GaN LED an ideal candidate for a color-tunable single pixel, which could be useful for advancements in micro-LED display applications. The change in the relative emission intensity results from changes in the population ratio between the 5D0 and 5D1 excited states of the Eu3+ ions. A series of rate equations, which models each state's population, was used to explore the color tuning possibilities under different current injection conditions. Emission spectra from fabricated devices were collected under these current injections conditions, and the experimental results were compared with the simulations.
Presenters
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Kelsey Ortiz
West Chester Univ, West Chester University
Authors
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Kelsey Ortiz
West Chester Univ, West Chester University
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Hayley Austin
Lehigh Univ, Lehigh University
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Brandon Mitchell
West Chester Univ, West Chester University
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Yasufumi Fujiwara
Osaka Univ, Osaka University
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Volkmar R G Dierolf
Lehigh Univ, Lehigh University