Photoresponse study of bulk n-type doped Molybdenite (MoS₂)

Molybdenite (MoS₂) has semiconducting nature in both bulk and two-dimensional morphology, which make it useful for possible (opto) electronic device fabrications. High melting point of Molybdenite (~2500° C) make it formidable to fabricate practical optoelectronic devices (e.g. photodetector) out of it. We used Plasma Spark sintering technique to make bulk polycrystalline samples at high vacuum (10^-6 torr) and pressure (10 bar). Synthesized raw samples were polished and diced into the cube. The prepared bulk cubic shape samples mounted on chip holder and four ohmic contacts made on them using silver paint. Hall measurement proved n-type nature of the samples (n_e=10¹⁷ cm^-3). We used chopped laser lights of different colors in conjunction with lock-in technique to measure photoresponse of our sample. We plan to present our findings at coming APS March meeting.