Ionic liquid gating of electro-spun camphor sulphonic acid doped polyaniline/polyethylene oxide nanofiber field effect transistor

Electrospinning was used to fabricate nanofibers of camphor sulphonic acid doped polyaniline/polyethylene oxide (PANi-CSA/PEO) composites. The PEO concentration in the composite nanofiber was 22wt%. Individual fibers were captured on gold pre-patterned Si⁺/SiO₂ substrate and electrically characterized in a field effect transistor (FET) configuration using a back gate. The same fibers were also electrically characterized using an ionic liquid (IL) top gate. An ionic liquid was chosen because it has a high specific capacitance that reduces the operating voltages considerably. The device operational voltages were in the range ±2V. The electrical characterization of PANi-CSA/PEO nanofibers with IL gating has not been reported before, and in this poster we shall compare the device parameters (on/off ratio, mobility, threshold voltage and the sub-threshold swing) of drop cast thin film, spun cast thin film and electro-spun nanofiber FET.