Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect

Odd-parity magnetoresistance (OMR), in which an electrical resistance R changes as an odd function of the applied magnetic field, is a highly unconventional phenomenon only observed in a few systems.^[1-3] The resistance change is tiny, reaching at most 2%, and cannot be controlled by an electrical means due to their metallicity. Here we report a new giant gate-controlled OMR observed in one-dimensional edge channels, formed by the Fermi level pinning at the side surface, in bilayer heterostructures consisting of nonmagnetic semiconductor InAs and ferromagnetic semiconductor (Ga,Fe)Sb.^[4] The OMR in our system reaches 13.5% at 14 T, which is the largest value ever reported. Also, we found that simultaneous breaking of both spatial inversion symmetry and time reversal symmetry due to the strong magnetic proximity effect (MPE) at the interface between InAs/(Ga,Fe)Sb ^[5] is the main origin of the large OMR. We also successfully control the OMR using a gate voltage, which alters the MPE at the InAs/(Ga,Fe)Sb interfaces.
[1] Y. Wang et al., Nat. Commun. 11, 216 (2020).
[2] T. Fujita et al., Sci. Rep. 5, 9711 (2019).
[3] S. Albarakati et al., Sci. Adv. 5, eaaw0409 (2019).
[4] N. T. Tu, et al., APL 108, 192401 (2016).
[5] K. Takiguchi, L. D. Anh et al., Nat. Phys. 15, 1134 (2019).