Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond

Integrating quantum memories based on color centers in diamond with on-chip photonic devices may enable entanglement distribution over long distances, but efforts towards integration have been challenging as color centers are sensitive to their environment and their properties degrade in nanofabricated structures[1]. We present a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV⁰) centers. The combination of stable optical transitions and long spin coherence times makes the SiV⁰ center an attractive candidate for nodes in quantum networks[2,3]. Our design does not require etching the diamond substrate, thus avoiding material damage and spectral diffusion arising from nanofabrication. Through evanescent coupling to SiV⁰ centers near the diamond surface, the platform can enable Purcell enhancement of SiV⁰ emission and quantum frequency conversion to the telecommunication C-band.

[1]Ruf, M., et al. Nano lett. 19.6 (2019):3987-3992
[2]Rose, B. C., et al. Science 361.6397 (2018):60-63
[3]Zhang, Z., et al. arXiv:2004.12544 (2020)