Defects in SiC and hBN
FOCUS · F53 · ID: 381712
Presentations
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High-throughput identification of point defects in SiC
ORAL
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Presenters
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Joel Davidsson
Linkoping University
Authors
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Joel Davidsson
Linkoping University
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Viktor Ivady
Linkoping University
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Rickard Armiento
Linkoping University
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Igor Abrikosov
Theoretical Physics, Linköping University, Linkoping University
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First Principle Characterization of Optical Charge State Conversion of the Carbon Antisite-Vacancy in 4H-SiC
ORAL
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Presenters
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Oscar Bulancea Lindvall
Theoretical Physics, Linköping University
Authors
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Oscar Bulancea Lindvall
Theoretical Physics, Linköping University
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Viktor Ivády
Theoretical Solid State Physics, Wigner Research Centre for Physics
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Rickard Armiento
Theoretical Physics, Linköping University
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Igor Abrikosov
Theoretical Physics, Linköping University, Linkoping University
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The mystery of the missing neutral Si vacancy in 3C-SiC solved
ORAL
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Presenters
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Peter Schultz
Sandia National Laboratories
Authors
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Peter Schultz
Sandia National Laboratories
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Renee M. Van Ginhoven
Air Force Research Lab - Kirtland, Air Force Research Laboratory - Kirtland
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Arthur Edwards
Air Force Research Lab - Kirtland, Air Force Research Laboratory - Kirtland
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Spin Structure and Resonant Driving of Spin-1/2 Defects in SiC
ORAL
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Presenters
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Benedikt Tissot
Physics, University of Konstanz
Authors
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Benedikt Tissot
Physics, University of Konstanz
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Guido Burkard
Physics, University of Konstanz, Department of Physics, University of Konstanz, D-78457 Konstanz, Germany, Univ Konstanz
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The light years: Atomic-scale quantum photonics with combined optical and electron microscopy
Invited
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Presenters
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Jennifer Dionne
Department of Materials Science and Engineering, Stanford University
Authors
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Jennifer Dionne
Department of Materials Science and Engineering, Stanford University
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Probing the Optical Dynamics of Quantum Emitters in Hexagonal Boron Nitride
ORAL
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Presenters
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Raj Patel
University of Pennsylvania
Authors
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Raj Patel
University of Pennsylvania
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David Hopper
University of Pennsylvania
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Tzu-Yung Huang
University of Pennsylvania
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Jordan A Gusdorff
University of Pennsylvania
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Benjamin Porat
University of Pennsylvania
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Lee Bassett
University of Pennsylvania
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Excitation Energies of Defects in Hexagonal Boron Nitride via an Embedding Method using Auxilliary-Field Quantum Monte Carlo
ORAL
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Presenters
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Brian Busemeyer
Center for Computational Quantum Physics, Flatiron Institute, 162 5th Avenue, New York, NY 10010, Simons Foundation, Flatiron Institute
Authors
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Brian Busemeyer
Center for Computational Quantum Physics, Flatiron Institute, 162 5th Avenue, New York, NY 10010, Simons Foundation, Flatiron Institute
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Shiwei Zhang
Center for Computational Quantum Physics, Simons foundation, Flatiron institute, Center for Computational Quantum Physics, Flatiron Institute; William & Mary, Center of Computational Quantum Physics, Flatiron Institute, New York City, USA, Center for Computational Quantum Physics, Flatiron Institute, Center for Computational Quantum Physics, Flatiron Institute, 162 5th Avenue, New York, NY 10010, Simons Foundation, Center for Computational Quantum Physics
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Formation energies of charged defects in 2D materials - a new perspective
ORAL
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Presenters
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Andrew O'Hara
Department of Physics and Astronomy, Vanderbilt Univ, Department of Physics and Astronomy, Vanderbilt University, Vanderbilt Univ
Authors
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Andrew O'Hara
Department of Physics and Astronomy, Vanderbilt Univ, Department of Physics and Astronomy, Vanderbilt University, Vanderbilt Univ
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Blair Tuttle
Department of Physics, Penn State Behrend
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Xiaoguang Zhang
Department of Physics and the Quantum Theory Project, University of Florida, University of Florida, Department of Physics, Center for Molecular Magnetic Quantum Materials and Quantum Theory Project, University of Florida, Department of Physics, University of Florida, Department of Physics and the Quantum Theory Project, University of Florida, Gainesville, FL, Physics, University of Florida
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Sokrates T Pantelides
Department of Physics and Engineering, Vanderbilt University, Department of Physics and Astronomy, Vanderbilt Univ, Department of Physics and Astronomy, Vanderbilt University, Vanderbilt Univ, Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, USA, Institute of Physics, Chinese Academy of Sciences, Department of Physics and Astronomy & Department of Electrical Engineering and Computer Science, Vanderbilt University, Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, Department of Electrical Engineering and Computer Science, Vanderbilt University, Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Vanderbilt University
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Scaling quantum systems with silicon carbide and molecules
Invited
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Presenters
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David Awschalom
University of Chicago, Pritzker School of Molecular Engineering, University of Chicago, Pritzker School for Molecular Engineering, University of Chicago, Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory
Authors
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David Awschalom
University of Chicago, Pritzker School of Molecular Engineering, University of Chicago, Pritzker School for Molecular Engineering, University of Chicago, Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory
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