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Dirac electronic states of Bi<sub>2</sub>Se<sub>3</sub> thin films on ferromagnetic Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub> studied by high-resolution ARPES

ORAL

Abstract

We have epitaxially fabricated Bi2Se3 thin films on van der Waals ferromagnet, Cr2Si2Te6 (CST), and investigated their electronic structure by high-resolution angle-resolved photoemission spectroscopy (ARPES) [1]. We observed a large energy gap at the Dirac point in 2 quintuple-layer (QL) Bi2Se3 on CST in contrast to the gapless Dirac-cone state in 6 QL Bi2Se3 on CST. Compared to 2 QL Bi2Se3 on Si substrate, we found that the Dirac point of 2 QL Bi2Se3 on CST is located at lower binding energy with enhanced gap magnitude. In this talk, we will show temperature dependence of band structure across TC of CST, and discuss the origin of modulation of Dirac electronic states in Bi2Se3/CST heterostructure in terms of the lattice strain effect, interfacial coupling, and magnetic proximity effect.
[1] T. Kato et al., Phys. Rev. Mater. 4, 084202 (2020).

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Presenters

  • Takemi Kato

    Department of Physics, Tohoku University

Authors

  • Takemi Kato

    Department of Physics, Tohoku University

  • Katsuaki Sugawara

    Department of Physics, Tohoku University

  • Naohiro Ito

    Department of Physics, Tohoku University

  • Kunihiko Yamauchi

    Institute of Scientific and Industrial Research, Osaka University

  • Takumi Sato

    Department of Physics, Tohoku University

  • Tamio Oguchi

    Osaka Univ, Institute of Scientific and Industrial Research, Osaka University

  • Takashi Takahashi

    Department of Physics, Tohoku University

  • Yuki Shiomi

    Department of Basic Science, University of Tokyo

  • Eiji Saitoh

    Tohoku University, The University of Tokyo, Department of Applied Physics, The University of Tokyo, Department of Applied Physics, University of Tokyo

  • Takafumi Sato

    Department of Physics, Tohoku University