Parametric Amplification in a CMOS Quantum Dot coupled to a Microwave Cavity
ORAL
Abstract
We analyse through a semi-classical model and demonstrate experimentally parametric amplification using the tuneable tunnelling capacitance of a QD-reservoir electron transition in a CMOS nanowire split-gate transistor embedded in a 1.8 GHz superconducting spiral inductor microwave cavity. Pumping through one gate the QD-reservoir detuning at twice the cavity resonant frequency, while probing the hybrid QD-cavity in reflectometry, we achieve phase-sensitive (de)amplification of the reflection coefficient by (-)+3dB (cf. zero pump amplitude). The performance here was limited by the Sisyphus dissipation in the QD; however, we identify a clear path towards achieving gains comparable to JPAs using only the same devices already present for dispersive gate-based readout.
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Presenters
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Laurence Cochrane
Department of Engineering, University of Cambridge
Authors
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Laurence Cochrane
Department of Engineering, University of Cambridge
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Theodor Lundberg
Cavendish Laboratory, University of Cambridge
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David J. Ibberson
Quantum Engineering Technology Labs, University of Bristol
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Lisa A. Ibberson
Hitachi Cambridge Laboratory, Hitachi Cambridge Laboratory, University of Cambridge, Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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Louis HUTIN
CEA/LETI-MINATEC, CEA-Grenoble, CEA Leti, CEA, Grenoble, CEA, LETI, Minatec Campus, F-38054 Grenoble, France
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Maud Vinet
Leti, CEA, CEA/LETI-MINATEC, CEA-Grenoble, CEA Leti, CEA, Grenoble, CEA, LETI, Minatec Campus, F-38054 Grenoble, France
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Ashwin A. Seshia
Department of Engineering, University of Cambridge
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M Fernando Gonzalez-Zalba
Quantum Motion Technologies, Hitachi Cambridge Laboratory, Hitachi Cambridge Laboratory, University of Cambridge, Quantum Motion Technologies, Nexus, Discovery Way, Leeds, LS2 3AA, United Kingdom