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Integration of graphene and two-dimensional ferroelectrics: properties and related functional devices

ORAL

Abstract

Ferroelectric (FE) thin films have been investigated for many years due to their broad applications in electronic devices. It was recently demonstrated that FE functionality persists in ultrathin films, possibly even in some monolayers. However, the feasibility of 2D-based FE functional devices remains an open challenge. Here, by using DFT calculations, we propose and document the possible integration of graphene (Gr) with 2D FE materials on metal substrates in the form of functional FE devices. We show that monolayers of proposed M2O3 (M = Al, Y) in the quintuple-layer (QL) In2Se3 structure (five atomic planes in a monolayer) are stable 2D FE materials. The Gr/QL-M2O3/Ru heterostructure can function as a prototype ferroelectric tunnel junction, in which QL-M2O3 works as a ferroelectric tunnel barrier and the barrier width can be modulated by its polarization direction. Moreover, alternating the polarization of QL-M2O3 modulates the doping type of Gr, enabling the fabrication of Gr p–n junctions. By design, the proposed heterostructures can in principle be fabricated by intercalation, which is known to produce high-quality, large-scale 2D-based heterostructures. [1]

[1] X. Jin et al., Nanoscale Horiz. 5, 1303 (2020)

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Presenters

  • Xin Jin

    Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences

Authors

  • Xin Jin

    Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences

  • Yu-Yang Zhang

    Chinese Academy of Sciences,Institute of Physics, University of Chinese Academy of Sciences, Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China, School of physical sciences, Institute of Physics and University of Chinese Academy of Sciences, Institute of Physics, Chinese Academy of Sciences, Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences

  • Sokrates T Pantelides

    Department of Physics and Engineering, Vanderbilt University, Department of Physics and Astronomy, Vanderbilt Univ, Department of Physics and Astronomy, Vanderbilt University, Vanderbilt Univ, Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, USA, Institute of Physics, Chinese Academy of Sciences, Department of Physics and Astronomy & Department of Electrical Engineering and Computer Science, Vanderbilt University, Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, Department of Electrical Engineering and Computer Science, Vanderbilt University, Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Vanderbilt University

  • Shixuan Du

    Chinese Academy of Sciences,Institute of Physics, Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China, School of physical sciences, Institute of Physics and University of Chinese Academy of Sciences, Institute of Physics, Chinese Academy of Sciences, Chinese Academy of Science, Chinese Academy of Sciences, Institute of Physics, Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences