Raman scattering and transport properties of vanadium-doped iridium dioxide nanowires grown via chemical vapor deposition
ORAL
Abstract
Spin-orbit coupling (SOC) and electron interactions are two key ingredients for novel quantum phenomena and exotic topological states in condensed matter. 5d transition metal oxides (TMOs), such as the topological semimetal IrO2, possess strong SOC but relatively weak electron interaction. On the other hand, 3d TMOs, such as VO2, are strongly correlated systems in which SOC plays a negligible role. Integrating 3d and 5d transition metal elements into the same oxide compounds may offer a new platform to study the interplay of SOC and strong electron correlations. In this talk, we report on the synthesis of vanadium-doped IrO2 nanowires over a broad range of dopant concentrations grown via chemical vapor deposition. We will discuss how the electrical transport and structural properties of IrO2 vary as a function of vanadium doping, as well as how they are influenced by strain.
–
Presenters
-
Amanda Coughlin
Department of Physics, Indiana University - Bloomington
Authors
-
Amanda Coughlin
Department of Physics, Indiana University - Bloomington
-
Thomas Ruch
Department of Physics, Indiana University - Bloomington
-
Xun Zhan
Electron Microscope Center, Indiana University - Bloomington
-
Tian Tong
Department of Electrical and Computer Engineering, University of Houston
-
Isaac Delgass
Department of Physics, Indiana University - Bloomington
-
Brock Lehman
Department of Physics, Indiana University - Bloomington
-
Hanyu Zhu
Department of Materials Science and NanoEngineering, Rice University
-
Jiming Bao
Department of Electrical and Computer Engineering, University of Houston
-
Shixiong Zhang
Department of Physics, Indiana University - Bloomington