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Non-Abelian properties at 5/2 and 7/2 filling factors exposed using controlled e/4 population of Fabry-Perot interferometers.

ORAL

Abstract


Essential to establishing non-Abelian statistics at 5/2 & 7/2 filling in interferometry experiments is determining the response to changing the interferometer’s enclosed e/4 quasiparticle (qp) number. Past interference measurements have shown results consistent with the even-odd effect, a sign of non-Abelian properties, in which resistance across the interferometer oscillates with changing the parity of the enclosed e/4 number: alternate braiding of an even versus odd number of e/4 qps should switch between an interference signal of the Abelian process where e/4 braid e/4 + e/4 versus the e/4 braiding e/4, marked by no interference due to fermion parity changes with each braid. Experimentally the e/4 qp number can be altered by i) changing the interferometer area by changing the device’s side gate voltage, ii) sweeping B-field, which systematically changes e/4 number by 10 qps for each flux quantum added to the interferometer area, iii) using a small central gate in the interferometer area that allows controlled single e/4 changes. The first two of these techniques have shown interference results consistent with non-Abelian properties at 5/2. The small central gate adjustment of e/4 number is a new experimental method: here we show our progress in this effort.

Presenters

  • Robert Willett

    Nokia Bell Labs

Authors

  • Robert Willett

    Nokia Bell Labs

  • Kirill Shtengel

    University of California, Riverside

  • Chetan Nayak

    Microsoft, Microsoft Corporation & University of California, Santa Barbara

  • Loren Pfeiffer

    Princeton University, Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Department of Electrical Engineering, Princeton University, Electrical Engineering, Princeton, Electrical Engineering, Princeton University, Princeton

  • Kirk Baldwin

    Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton University, Department of Electrical Engineering, Princeton University, Electrical Engineering, Princeton, Electrical Engineering, Princeton University

  • Ken W. West

    Princeton University, Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Department of Electrical Engineering, Princeton University, Electrical Engineering, Princeton, Electrical Engineering, Princeton University, Princeton