Electronic compressibility study of transition metal dichalcogenide moiré superlattices

Moiré superlattices built on 2D transition metal dichalcogenide (TMD) semiconductors have presented a highly controllable platform to study Hubbard model physics on a triangular lattice. In this talk, we will present electronic compressibility study of TMD heterobilayer moiré superlattices. We have observed a series of incompressible charge-ordered states at both integer and fractional filling factors of the moiré superlattice. Both the thermodynamic gaps and the transition temperatures of these incompressible states are measured, allowing us to obtain the characteristic energy scales of the system. Furthermore, a charge-order-enhanced capacitance has been observed, which is driven by the device-geometry-dependent electron-electron interaction.