Room Temperature Operation of Donor-Based Atomically Precise Devices

Atomic precision (AP) electrical devices, fabricated using hydrogen depassivation lithography in a scanning tunneling microscope, offer a way to explore device physics with atomic control. However, these devices are isolated through freezing out leakage pathways at cryogenic temperatures and cannot function at room temperature (RT), making them incompatible with metal-oxide semiconductor (MOS) technologies. To address this, we have developed a MOS compatible counter-doping scheme, providing significant leakage current isolation. RT electrical measurements on AP devices demonstrate electrical properties on par with devices measured at low temperatures, aligning with electrical properties extracted from RT spectroscopic ellipsometry. This demonstration of a MOS doping scheme enabling RT operation enables the integration of AP devices with MOS technology.