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Superconducting Proximity Effect on a Magnetically Doped Topological Insulator Controlled by Magnetization

ORAL

Abstract

Proximity effect (PE) on magnetized topological insulators (TIs) has the potential to induce unconventional Cooper pairs, some of which can host Majorana fermions whose antiparticles are themselves. Theory predicts that the magnetized TI systems can tune its PE from a topological to a non-topological state by magnetization and chemical potential.
In this study, we investigated the magnetization dependence of PE on an Nb/ Fe-doped Bi2Te2Se Josephson junction. We evaluated Ic-H characteristics before/after applying large magnetic fields. The Ic-H patterns show typical Fraunhofer-like patterns with slight hysteresis. After large magnetic fields (> 0.5 T), the patterns were drastically shift depending on the direction of the last large fields. This shift indicates that the critical currents are sensitive to the existing remnant magnetization. We also observed a transition-like behavior in the conductance spectrum, which may relate with a topological phase transition.

Presenters

  • Rikizo Yano

    IMaSS, Nagoya University

Authors

  • Rikizo Yano

    IMaSS, Nagoya University

  • Masahiro Yamamoto

    Dep. of Appl. Phys., Nagoya University

  • Kohei Tsumura

    Dep. of Appl. Phys., Nagoya University

  • Hishiro T. Hirose

    Laboratory for Materials and Structures, Tokyo Institute of Technology

  • Vasily S. Stolyarov

    Moscow Institute of Physics and Technology, Russia, TQPSS, Moscow Institute of Physics and Technology

  • Yukio Tanaka

    Nagoya Univ, Applied Physics, Nagoya University, Applied Physics, Nagoya Univesity, Dep. of Appl. Phys., Nagoya University

  • Hiromi Kashiwaya

    National Institute of Advanced Industrial Science and Technology

  • Yasuhiro Asano

    Center of Topological Science and Technology, Hokkaido University

  • Takao Sasagawa

    Materials and Structure Laboratory, Tokyo Institute of Technology, Tokyo Institute of Technology, Laboratory for Materials and Structures, Tokyo Institute of Technology

  • Satoshi Kashiwaya

    Dep. of Appl. Phys., Nagoya University