Bilayer graphene stacking registry control.

The stacking type of bilayer graphene plays a major role in determining its electronic spectrum. AB-BA domain walls contain SP stacking solitons and twisted bilayer gives rise to the flat bands and superconductivity. With the use of a non-planar substrate, a bilayer can be bent, introducing slips in the stacking pattern. These non-AB non-twisted patches of bilayer can be prevented from slipping back into AB by a larger AB bilayer “anchor” on the other side of the bend. Classical molecular dynamics relaxation is performed to account for possible intralayer lattice distortions. Two registries are shown to be stable with their electronic spectrum calculated in the tight-binding model. The first one is a 1nm wide strip of 0.4A away-from-AA stacking and the second is a 5nm wide strip of SP stacking, previously only found in AB-BA domain walls. Finally, we created a map of all stackings one might be able to obtain within this approach.