APS Logo

Strontium Stannate as an Ultra-Wide Bandgap Semiconductor

ORAL

Abstract

The development of superior ultra-wide bandgap (UWBG) semiconductors is crucial for next-generation high-power devices. This talk establishes SrSnO3 (SSO) as an outstanding UWBG semiconductor. We show SSO thin-film growth with controlled doping and present detailed transport measurements supplemented by first-principles calculations of e-ph interactions and charge transport. We discuss details of the MBE growth, strain relaxation and electronic transport properties as a function of temperature, chemical doping and strain. Our results shed light on the transport behavior and mobility-limiting mechanisms in SSO, and demonstrate that Nd-doped SSO films achieve the best of both worlds – carrier densities as high as 2 × 1020 cm-3 together with a high room temperature mobility of ~70 cm2V-1s-1. These figures of merit place perovskite oxides, for the first time, on par with well-established UWBG semiconductors.

–

Presenters

  • Tristan Truttmann

    Department of Chemical Engineering and Materials Science, University of Minnesota, University of Minnesota

Authors

  • Tristan Truttmann

    Department of Chemical Engineering and Materials Science, University of Minnesota, University of Minnesota

  • Jin-Jian Zhou

    Department of Applied Physics and Materials Science, California Institute of Technology

  • I-Te Lu

    Caltech, Department of Applied Physics and Materials Science, California Institute of Technology

  • Anil Kumar Rajapitamahuni

    Department of Chemical Engineering and Materials Science, University of Minnesota

  • Fengdeng Liu

    Department of Chemical Engineering and Materials Science, University of Minnesota

  • Richard James

    Department of Aerospace Engineering and Mechanics, University of Minnesota

  • Marco Bernardi

    Caltech, California Institute of Technology, Department of Applied Physics and Materials Science, California Institute of Technology, Applied Physics & Materials Science, Caltech

  • Bharat Jalan

    University of Minnesota, Department of Chemical Engineering and Materials Science, University of Minnesota, Department of Electrical and Computer Engineering, University of Minnesota