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Hybrid Molecular Beam Epitaxy of Ge-based Oxides

ORAL

Abstract

Germanium-containing oxides such as rutile GeO2 are earning attention owing to their ultra-wide band gap for high power device application. Here, we present the use of germanium tetraisopropoxide (GTIP) as a precursor for hybrid MBE of Ge-containing compounds. We use GexSn1-xO2 as a model system for this new synthesis method. Using a combination of high-resolution X-ray diffraction and X-ray photoelectron spectroscopy to characterize these films, we successfully grow epitaxial rutile GexSn1-xO2 on TiO2 (001) substrates up to x = 0.5, above which the films become amorphous at low substrate temperatures. No Ge-rich films grow at higher temperatures likely due to desorption of Ge-based suboxides. These results confirm the viability of the GTIP precursor in the growth of germanium containing oxides by hybrid MBE, and may thus pave the road to achieving high-quality perovskite germanates thin films.

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Presenters

  • Fengdeng Liu

    Department of Chemical Engineering and Materials Science, University of Minnesota

Authors

  • Fengdeng Liu

    Department of Chemical Engineering and Materials Science, University of Minnesota

  • Tristan Truttmann

    Department of Chemical Engineering and Materials Science, University of Minnesota, University of Minnesota

  • Dooyong Lee

    Department of Chemical Engineering and Materials Science, University of Minnesota

  • William Nunn

    University of Minnesota, Department of Chemical Engineering and Materials Science, University of Minnesota

  • Bharat Jalan

    University of Minnesota, Department of Chemical Engineering and Materials Science, University of Minnesota, Department of Electrical and Computer Engineering, University of Minnesota