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Pressure-induced metal-insulator transition in oxygen-deficient ferroelectrics

ORAL

Abstract

Pressure and oxygen vacancies are usually considered as deleterious for ferroelectric materials because both tend to reduce their polarization. Extending our previous work (Phys. Rev. Materials 3, 054405 (2019)), we perform first-principles calculations to show that in oxygen-deficient LiNbO3−δ, pressure induces a novel metal-insulator transition around 8-9 GPa. Strong polar displacements are robust in both metallic and insulating LiNbO3−δ. The transition arises from the change of an oxygen vacancy defect state. Pressure increases the polar displacements of LiNbO3−δ, which reduces the band width of the defect state and eventually turns it into an in-gap state. In the insulating phase, the in-gap state is further pushed away from the conduction band edge under pressure, which increases the fundamental gap. Our work shows that for LiNbO3-type strong ferroelectrics, combining oxygen vacancies and pressure can lead to new phenomena and potential functions, in contrast to the harmful effects occurring to perovskite ferroelectric oxides such as BaTiO3.

Presenters

  • Chengliang Xia

    The University of Hong Kong

Authors

  • Chengliang Xia

    The University of Hong Kong

  • Yue Chen

    The University of Hong Kong

  • Hanghui Chen

    NYU-ECNU Institute of Physics, NYU Shanghai, Department of Physics, New York University, NYU Shanghai, New York University Shanghai, NYU-ECNU Institute of Physics, New York University Shanghai