Studying the Ferroelectric Domain Memory-Dependent Evolutions in Multiferroic BTO/CFO Janus Nanofibers Exploiting a Magnetic Field

Multiferroic (MF) materials with coexisting ferroelectricity and ferromagnetism exhibit memory, a behavior that leads to the development of many novel applications. In this work to further explore this behavior, the ferroelectric domains are optically observed in BTO/CFO Janus nanofibers using magnetic polarization resolved second harmonic generation measurement technique. Analysis of the non-magnetic BTO domain changes at room temperature indicates that the ferroelectric memory can be predicted and manipulated exploiting a magnetic field. In addition, I present a physical interpretation to demonstrate these memory-dependent evolutions in MF Janus nanofibers. The realization of this memory effect in this specific geometry provides a promising route to design a new generation of nanoscale memory devices.